A novel device principle for nanoelectronicsXU, H. Q; SHORUBALKO, I; MAXIMOV, I et al.Materials science & engineering C. Biomimetic and supramolecular systems. 2002, Vol 19, Num 1-2, pp 417-420Conference Paper

Transport balistique et quasi balistique dans les structures de semiconducteurs. RevueRYZHIJ, V. I; BANNOV, N. A; FEDIRKO, V. A et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 769-786, issn 0015-3222Article

Influence of geometry on the Hall effect in ballistic wiresFORD, C. J. B; WASHBURN, S; BÜTTIKER, M et al.Physical review letters. 1989, Vol 62, Num 23, pp 2724-2727, issn 0031-9007Article

Noise temperature reduction by doping in ballistic n⁺-n-n⁺ nanodiodesGOMILA, G; CANTALAPIEDRA, I. R; GONZALEZ, T et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S209-S211, issn 0268-1242Conference Paper

Etude expérimentale des propriétés de transport non stationnaire dans InP par photoconduction = Experimental study of non stationary transport properties in InP by photoconductionDe Carre, Patrice; Laval, Suzanne.1990, 202 p.Thesis

Unbounded fluctuations in transport through an integrable cavityPICHAUREAU, P; JALABERT, R. A.The European physical journal. B, Condensed matter physics. 1999, Vol 9, Num 2, pp 299-307, issn 1434-6028Article

Ballistic transport and properties of submicrometer silicon MOSFET's from 300 to 4.2 KROBERTSON, P. J; DUMIN, D. J.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 4, pp 494-498, issn 0018-9383Article

Ballistic/quasi-ballistic transport in nanoscale transistorNATORI, Kenji.Applied surface science. 2008, Vol 254, Num 19, pp 6194-6198, issn 0169-4332, 5 p.Conference Paper

THz-emitter based on ballistic transport in nano-pin diodesRENNER, F; ECKARDT, M; DRISCOLL, D et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp 965-969, issn 0031-8965, 5 p.Conference Paper

Entanglement and quantum computing with ballistic electronsBERTONI, Andrea; REGGIANI, Susanna.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S113-S117, issn 0268-1242Conference Paper

Usefulness of nanocrystalline silicon ballistic emitter for operation in either low-vacuum or atmospheric pressureKOSHIDA, Nobuyoshi; KOJIMA, Akira; ICHIHARA, Tsutomu et al.International Vacuum Nanoelectronics Conference. 2004, pp 236-237, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

High on/off current ratio in ballistic CNTFETs based on tuning the gate insulator parameters for different ambient temperaturesSHIRAZI, Shaahin G; MIRZAKUCHAKI, Sattar.Applied physics. A, Materials science & processing (Print). 2013, Vol 113, Num 2, pp 447-457, issn 0947-8396, 11 p.Article

Effects of extreme magnetic quadrupole fields on Penning traps and the consequences for antihydrogen trappingFAJANS, J; BERTSCHE, W; BURKE, K et al.Physical review letters. 2005, Vol 95, Num 15, pp 155001.1-155001.4, issn 0031-9007Article

Ballistic transport in strained-Si cavities : experiment and theorySCAPPUCCI, G; DI GASPARE, L; CURATOLA, G et al.IEEE conference on nanotechnology. 2004, pp 92-94, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper

Universal signature of ballistic transport in nanoscale field effect transistorsSCHLIEMANN, A; WORSCHECH, L; FORCHEL, A et al.International Electron Devices Meeting. 2004, pp 1039-1042, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Correlations of conductance peaks and transmission phases in deformed quantum dotsBALTIN, R; GEFEN, Y; HACKENBROICH, G et al.The European physical journal. B, Condensed matter physics. 1999, Vol 10, Num 1, pp 119-129, issn 1434-6028Article

Coulomb drag in the ballistic electron transport regimeGUREVICH, V. L; PEVZNER, V. B; FENTON, E. W et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 11, pp 2551-2558, issn 0953-8984Article

Large magnetic depopulation of multiple parallel ballistic point contacts with circulating channelsHIRAYAMA, Y; SAKU, T.Physical review. B, Condensed matter. 1990, Vol 42, Num 17, pp 11408-11411, issn 0163-1829Article

Comments on the nature of ballistic transport in small semiconductor devices at low applied voltageIGNATOV, A. A; OKOMELKOV, A. V.Solid state communications. 1984, Vol 50, Num 7, pp 677-679, issn 0038-1098Article

The Zero-Voltage Conductance of Nanographenes: Simple Rules and Quantitative EstimatesMAYOU, Didier; YONGXI ZHOU; ERNZERHOF, Matthias et al.Journal of physical chemistry. C. 2013, Vol 117, Num 15, pp 7870-7884, issn 1932-7447, 15 p.Article

Very High Thermopower of Bi Nanowires with Embedded Quantum Point ContactsSHAPIRA, Eyal; HOLTZMAN, Amir; MARCHAK, Debora et al.Nano letters (Print). 2012, Vol 12, Num 2, pp 808-812, issn 1530-6984, 5 p.Article

Polarization optics analogy of quantum wavefunctions in grapheneDRAGOMAN, D.Journal of the Optical Society of America. B, Optical physics (Print). 2010, Vol 27, Num 7, pp 1325-1331, issn 0740-3224, 7 p.Article

Selective transmission and enhanced thermal conductance of ballistic phonon by nanocavities embedded in a narrow constrictionHUANG, Wei-Qing; HUANG, Bai-Yun; YI, Dan-Qing et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 1, issn 0022-3727, 015101.1-015101.5Article

Electromigration forces on ions in carbon nanotubesHEINZE, S; WANG, Neng-Ping; TERSOFF, J et al.Physical review letters. 2005, Vol 95, Num 18, pp 186802.1-186802.4, issn 0031-9007Article

Ballistic thermal conductance limited by phonon roughness scattering: A comparison of power-law and Gaussian roughnessPALASANTZAS, G.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 15, pp 153404.1-153404.4, issn 1098-0121Article